 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| RF Power Field Effect Transistor LDMOS, 1800 -- 2000 MHz, 30W, 26V 5/14/04 Preliminary MAPLST1820-030CF Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier applications 30W CW Output Power at P1dB 13dB Gain at P1dB 45% Drain Efficiency at P1dB 10:1 VSWR Ruggedness (CW @ 30W, 26V, 1900MHz) Internal input and output matching Package Style P-237 Maximum Ratings Parameter Drain--Source Voltage Gate--Source Voltage Drain Current -- Continuous Total Power Dissipation @ TC = 25 C Storage Temperature Junction Temperature Symbol VDSS VGS ID PD TSTG TJ Rating 65 20 10 97 -40 to +150 +200 Units Vdc Vdc Adc W C C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.8 Unit C/W NOTE--CAUTION--MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 1800 -- 2000 MHz, 30W, 26V MAPLST1820-030CF 5/14/04 Preliminary Characteristic DC CHARACTERISTICS @ 25C Characteristic Drain-Source Breakdown Voltage OFF(VGS = 0 Vdc, ID = 20 Adc) CHARACTERISTICS Zero Gate Voltage Drain Leakage Current 26 (VDS = 65 Vdc, VGS = 0) DS GS Gate--Source Leakage Leakage Zero Gate Voltage DrainCurrent Current (VGS = 5 Vdc, V (VDS = 26Vdc, VDS ==0) 0) GS Gate Threshold Voltage Gate--SourceVdc, I = 20 mA) (VDS = 10 Leakage Current D (VGS = 5 Vdc, VDS = 0) Drain-Source On-Voltage ON CHARACTERISTICS A) (VGS = 10 Vdc, ID = 1 Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25C Input Capacitance (Capacitance includes internal matching capacitors) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance DYNAMIC CHARACTERISTICS (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS (In M/A-COM Test Fixture) (2) FUNCTIONAL TESTS@ 25C (In M/A-COM Test Fixture) Two-Tone Common-Source Amplifier Power Gain (VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA, f1 = 1990.0 MHz, f2 = 1990.1 MHz) Two-Tone Drain Efficiency (VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA, f1 = 1990.0 MHz, f2 = 1990.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA, f1 = 1990.0 MHz, f2 = 1990.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Two-Tone Drain Efficiency (VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Two-Tone Intermodulation Distortion (VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Output VSWR Tolerance (VDD = 26 Vdc, POUT = 30 W, IDQ = 300 mA, f = 1900 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Gps 12 13 -- dB Ciss Coss Crss -- -- -- 50 32 1.4 -- -- -- pF pF pF Symbol Min Typ Max Unit Symbol Min V(BR)DSS 65 IDSSIDSS IDSSIGSS VGS(th) IGSS VDS(on) Gm ---- ---- -- 2 -- -- Typ -- ---- ---- 2.6 -- 0.32 1.6 Max -- 100 10 11 4 1 -- -- Unit Vdc Adc Adc Adc Adc Vdc Adc Vdc S EFF () -- 33 -- % IMD -- -30 -- dBc Gps 12 13 -- dB EFF () -- 33 -- % IMD -- -30 -28 dBc No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 1800 -- 2000 MHz, 30W, 26V MAPLST1820-030CF 5/14/04 Preliminary C1,C2 C3,C10 C4 C5,C11 C6,C15 C7 C8 C12 C13 Z1-Z8 Electrolytic Capacitor, 470 F Ceramic Chip Capacitor, 10 pF Ceramic Chip Capacitor, 0.7 pF Ceramic Chip Capacitor, 5.1 pF Ceramic Chip Capacitor, 0.1 F Ceramic Chip Capacitor, 1.2 pF Ceramic Chip Capacitor, 0.6 pF Ceramic Chip Capacitor, 91 pF Electrolytic Capacitor, 22 F Distributed Microstrip Element J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 8 nH, CoilCraft A03T L2,L3,L5,L6,L7 Inductor, Ferrite Bead, Fair Rite 2743019477 L4 Inductor, 28 H, CoilCraft A08T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPLST1920-030WF R1 Chip Resistor, 3.7 Ohm R2, R3 Chip Resistor, 12 Ohm R4,R5,R6 Chip Resistor, 10 Ohm PC Board (74350126-01), Arlon Woven Glass Teflon .030" Thick, Er=2.54, 2 Oz Copper Both Sides Figure 1. 1930--1990 MHz Test Fixture Schematic Figure 2. 1930--1900 MHz Test Fixture Component Layout 3 RF Power LDMOS Transistor, 1800 -- 2000 MHz, 30W, 26V MAPLST1820-030CF 5/14/04 Preliminary 20 Gain (dB), Efficiency (%) 18 16 14 -45 Gain (dB), Efficiency (%) VDD = 26V, Iq = 350mA, POUT=(36dBm) IS-95, 9 channels Forward Efficiency ACPR 885kHz -40 25 20 15 10 5 0 10 15 20 Vdd = 26V, Iq = 350mA f = 1.96 GHz IS-95 9 Channels Forward Gain ACPR 885 kHz Nd ACPR 1.98 MHz -30 -40 -50 -60 -70 -80 40 ACPR (dBc) 46 -55 Gain -60 ACPR 1.98 MHz -65 12 10 8 1.9 1.92 1.94 1.96 1.98 Frequency (GHz) 2 -70 2.02 ACPR (dBc) -50 25 30 P(ave) dBm 35 Graph 1. Class AB Broadband Circuit Performance Graph 2. CDMA ACPR, Power Gain and Drain Efficiency vs. Output Power -20 -25 -30 VDD = 26V, 1.96 GHz Two tones, 100 kHz spacing IMD (dBc) -20 -30 -40 -50 -60 -70 VDD = 26V Iq = 300mA f = 1.96 GHz, 100kHz tone spacing IM3 (dBc) -35 -40 -45 -50 -55 -60 250 mA 300 mA 150 mA 200 mA 350 mA 400 mA IM3 IM5 IM7 -80 24 26 28 30 32 34 36 38 40 42 44 P(ave) dBm 20 22 24 26 28 30 32 34 36 38 40 42 44 46 POUT (dBm PEP) Graph 3. Intermodulation Distortion vs. Output Power Graph 4. Intermodulation Distortion Products vs. Output Power 14 13.5 13 12.5 400 mA 350 mA 300 mA 250 mA 200 mA 150 mA Gain (dB) 12 11.5 11 10.5 10 9.5 9 VDD = 26V, 1.96 GHz Two tones, 100 kHz spacing 20 22 24 26 28 30 32 34 36 38 40 42 44 46 POUT(dBm) PEP Graph 5. Power Gain versus Output Power 4 RF Power LDMOS Transistor, 1800 -- 2000 MHz, 30W, 26V MAPLST1820-030CF 5/14/04 Preliminary Package Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 5 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 |
Price & Availability of MAPLST1820-030CF
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |